A slab of silicon of thickness t = 1.0 mm and width = 1.0 cm is

A slab of silicon of thickness t = 1.0 mm and width ω = 1.0 cm is placed in a magnetic field B = 0.4 T. The slab is in the xy plane, the magnetic field points in the positive z direction. When a current of 0.2 A flows through the sample in the positive x direction, a voltage difference of 5 mV develops across the width of the sample with the electric field in the sample pointing in the positive y direction. Determine the semiconductor type (n or p) and the concentration of charge carriers.