For an ideal p-n-junction rectifier with a sharp boundary between its two semiconducting sides, the current I
Question:
For an ideal p-n-junction rectifier with a sharp boundary between its two semiconducting sides, the current I is related to the potential difference V across the rectifier by I = I0 (eeV/KT = 1), where I0, which depends on the materials but not on I or V, is called the reverse saturation current. The potential difference V is positive if the rectifier is forward-biased and negative if it is back-biased.
(a) Verify that this expression predicts the behavior of a junction rectifier by graphing I versus V from – 0.12 V to + 0.12 V. Take T = 300 K and I0: 5.0nA.
(b) For the same temperature, calculate the ratio of the current for a 0.50 V forward bias to the current for a 0.50 V back bias.
Step by Step Answer:
Probability & Statistics For Engineers & Scientists
ISBN: 9780130415295
7th Edition
Authors: Ronald E. Walpole, Raymond H. Myers, Sharon L. Myers, Keying