An n-type gallium arsenide semicnductor is doped with N d = 10 16 cm -3 and N
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An n-type gallium arsenide semicnductor is doped with N d = 10 16 cm -3 and N a = 0. the minority carrier lifetime is r po = 2× 10 -7 s. calculate the steady-state increase in conductivity and the steady-state excess carrier recombination rate if a uniform genreration rate, g' = 2 × 10 21 cm -3 - s -1 , is incident on the semiconductor.
Related Book For
Materials Science and Engineering An Introduction
ISBN: 978-0470419977
8th edition
Authors: William D. Callister Jr., David G. Rethwisch
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