GaAs at T= 300 K is doped with donor impurity atoms at a concentration of 7 x 1016 cm ^-3 . Additional impurity atoms are to be added such that the Fermi level is 0.55 eV above the intrinsic Fermi level. Determine the type (donor or acceptor) and concentration of impurity atoms to be added.

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The concentration of the electrons in the semiconductor is given by the relation as follows Here n i ... View the full answer