High- low junctions are common in bipolar devices. Consider the (majority ?electron) conduction properties of the abrupt
Question:
High- low junctions are common in bipolar devices. Consider the (majority ?electron) conduction properties of the abrupt n-n + junction shown below. The doping density is N DL in the low side N DH in the high side. The widths W n and W of the low and high (quasi-neutral) sides are much wider than the width of the space-charge region at the metallurgical junction. Neglect electron degeneracy and energy-gap narrowing.
(a) For V >0, plot the variation of the electron quasi-Fermi level E Fn across the n-n + junction. Ignore the space-charge region.
(b) Referring to (a) derive an expression for the current I. Assume a constant cross-sectional area A.
(c) How would electron degeneracy and energy-gap narrowing in the n + . Region affect 1?
Fundamentals of Physics
ISBN: 978-1118230725
10th Extended edition
Authors: Jearl Walker, Halliday Resnick