2. Deposition rate of silicon from silane (SiH4) at a gas flow rate of 100 sccm...

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2. Deposition rate of silicon from silane (SiH4) at a gas flow rate of 100 sccm is shown on the next page. a. Is the deposition reaction rate limited or transport limited at a temperature of 650 C? State your reason. Deposition rate (m/min) 0.1 0.01 0.7 0.8 1.1 0.9 1.0 1000/T(K) b. What is the activation energy (in eV) in the reaction rate regime? c. At the highest temperature, the deposition rate is 0.85 m/min. What deposition rate would you expect at this temperature if the flow rate were reduced to 50 sccm? 2. Deposition rate of silicon from silane (SiH4) at a gas flow rate of 100 sccm is shown on the next page. a. Is the deposition reaction rate limited or transport limited at a temperature of 650 C? State your reason. Deposition rate (m/min) 0.1 0.01 0.7 0.8 1.1 0.9 1.0 1000/T(K) b. What is the activation energy (in eV) in the reaction rate regime? c. At the highest temperature, the deposition rate is 0.85 m/min. What deposition rate would you expect at this temperature if the flow rate were reduced to 50 sccm?