4. [20 points] Following table shows an experiment designed in plasma etching process. Three factors (Gap, Power,
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- 4. [20 points] Following table shows an experiment designed in plasma etching process. Three factors (Gap, Power, Coded) were investigated to study their effect on the etch rate (dependent variable) in a semiconductor water etching application. The order of the experiment is as shown in the table below.
| Experiment Order | Gap (cm) | Power (W) | Coded | Etch Rate (/m) |
| 1 | .6 | 350 | -1 | 1054 |
| 2 | .6 | 350 | +1 | 936 |
| 3 | .6 | 400 | -1 | 1179 |
| 4 | .6 | 400 | +1 | 1417 |
| 5 | 1.0 | 350 | -1 | 1049 |
| 6 | 1.0 | 350 | +1 | 1287 |
| 7 | 1.0 | 400 | -1 | 927 |
| 8 | 1.0 | 400 | +1 | 1345 |
- a. State two possible flaws of this experiment.
- b. Explain what can be done to overcome the issues you mentioned.
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