5. This problem concerns a GaAs pn junction doped Na-2108cm on the p-side and Na 3x107cm...

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5. This problem concerns a GaAs pn junction doped Na-2108cm on the p-side and Na 3x107cm on the n-side. Assume that n=2.25x106cm 3 and Eg=1.422eV. (a) Considering the built in voltage, which side is more positive? (the p-side or the n- side)? Explain your answer. (b) What is the magnitude of the built-in potential? (c) Calculate the width w of the depletion region given that the dielectric constant of GaAs is 1.160 x 10-12F/cm = 5. This problem concerns a GaAs pn junction doped Na-2108cm on the p-side and Na 3x107cm on the n-side. Assume that n=2.25x106cm 3 and Eg=1.422eV. (a) Considering the built in voltage, which side is more positive? (the p-side or the n- side)? Explain your answer. (b) What is the magnitude of the built-in potential? (c) Calculate the width w of the depletion region given that the dielectric constant of GaAs is 1.160 x 10-12F/cm = 5. This problem concerns a GaAs pn junction doped Na-2108cm on the p-side and Na 3x107cm on the n-side. Assume that n=2.25x106cm 3 and Eg=1.422eV. (a) Considering the built in voltage, which side is more positive? (the p-side or the n- side)? Explain your answer. (b) What is the magnitude of the built-in potential? (c) Calculate the width w of the depletion region given that the dielectric constant of GaAs is 1.160 x 10-12F/cm =

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Answer Given N 210 cm N 310 cm n 22510 cm Eg 1422 eV epsilons 1160 1012 Fcm ... View the full answer