A molecular beam epitaxy (MBE) system contains separate Al and As effusion evaporation sources of 4 cm
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A molecular beam epitaxy (MBE) system contains separate Al and As effusion evaporation sources of 4 cm2 area, located 10 cm from a (100) GaAs substrate. The Al source is heated to 1000C, and the As source is heated to 300C. What is the growth rate of the AlAs film in /sec? (Note that AlAs has a similar crystal structure and lattice parameter (5.661 ) as GaAs.)
Related Book For
Income Tax Fundamentals 2013
ISBN: 9781285586618
31st Edition
Authors: Gerald E. Whittenburg, Martha Altus Buller, Steven L Gill
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