A Si sample at 300 K, of width 0.01 cm, length 0.1 cm and thickness 1.0...

 

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A Si sample at 300 K, of width 0.01 cm, length 0.1 cm and thickness 1.0 x 10-³ cm, is provided with contacts as required for Hall - effect measurements and is placed in a 1000 G magnetic field. When a potential of 15.0 V is applied along the length of the sample, a current of magnitude 0.75 mA is observed and a Hall voltage of - 5.8 mV is measured. Find; a. the resistance of the sample, b. the majority carrier concentration, c. the Hall constant and d. the mobility in m²/V-s of the majority carriers in the sample. e. Is this sample n or p-type? Doped with trivalent or pentavalent impurities? A Si sample at 300 K, of width 0.01 cm, length 0.1 cm and thickness 1.0 x 10-³ cm, is provided with contacts as required for Hall - effect measurements and is placed in a 1000 G magnetic field. When a potential of 15.0 V is applied along the length of the sample, a current of magnitude 0.75 mA is observed and a Hall voltage of - 5.8 mV is measured. Find; a. the resistance of the sample, b. the majority carrier concentration, c. the Hall constant and d. the mobility in m²/V-s of the majority carriers in the sample. e. Is this sample n or p-type? Doped with trivalent or pentavalent impurities?

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Solving the Hall Effect Problem Heres how to solve the given problem about the Hall effect in a Si sample a Resistance of the sample Convert dimension... View the full answer