Comparing typical long-channel IDS-VDS characteristics shown in Figure Q5(a), you can find that there are mainly two short-channel-effects in Figure Q5(b).

(a) What are they? (i.e., name)

(b) What is the evidence of each short-channel-effect?

(c) Also, briefly explain the origins of two phenomena.

[Please make an answer table.]

 

Transcribed Image Text:

20 10 | (a) Name Vas- Vr-4V IS VoV4V (b) Evidence Va- V-3V (c) Origins Var- Vy-2V Va-V=2V Houndary of Voa- Vy-IV Vas-V-IV saturation Answer table form 3. Va (V) Vas (V) Figure Q5(a) Figure Q5(b) (yu) (V 20 10 | (a) Name Vas- Vr-4V IS VoV4V (b) Evidence Va- V-3V (c) Origins Var- Vy-2V Va-V=2V Houndary of Voa- Vy-IV Vas-V-IV saturation Answer table form 3. Va (V) Vas (V) Figure Q5(a) Figure Q5(b) (yu) (V

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Solution ANS1 Name Shortlength phenomenon is MOSFET device Short Channel length becomes when ... View the full answer