1. Compute the threshold voltage of a n-type MOSFET (Source/Drain n-type, and channel p- type) with...

 

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1. Compute the threshold voltage of a n-type MOSFET (Source/Drain n-type, and channel p- type) with channel doping (N.) = 1.45x10" 1/cm', oxide thickness (tor) = 2nm, and temperature (T)=30OK. Use the table below for values of various constants [30 points] 2. Compute the drain current of the MOSFET of question 1 for following conditions. Assume: Width (W) = 110nm, and Length (L) = 22nm, un = 1000 cm/V-s [40 points] a. Vgs = 2.0V, Vds=100mV b. Vgs = 2.5V, Vds = 2.5V 3. Consider the MOSFETS from equation 1 shows a subthreshold current of 10nA with Vgs=0. Compute Vgs at which current will be 500nA? Assume, exp (-V = 0, and T = 300K [30 KT Points] Useful Equations and constants: ZEsiNa(2Wm) kT Na Ven = 24g + and p= In- Cox MOSFET Currents: Linear (V,s > Veh and Vas < Vgs - Vin): las = 4,Cox (Vgs-V)Vas -Vås Saturation (Vas > Veh. Vas 2 Vgs - Ve): las =Cox(Vas - Ve)* Subthreshold Current in MOSFET (Vgs < Vth): Ilas = 1, exp ( (1- exp (-) !! !! (q(Vas-V %3D nkT n = 1+ Ci = 1+t x fax , and depletion width = tsi 2Esi(2B) Cox Eox tsi qNa Constant Symbol Value Boltzmann's constant k 1.38x10-23 1/K Charge of an electron 1.6x10-1"C Thermal voltage @ 30OK KT/9 0.026 V Permittivity of free space 8.854x10-14 F/cm Permittivity of silicon Esi 11.68, - 1.03x10-12 F/cm Permittivity of SiO, Ear 3.9€g = 3.45x10-13 F/cm Concentration of carriers in intrinsic silicon 1.45x1010 1/cm3 1. Compute the threshold voltage of a n-type MOSFET (Source/Drain n-type, and channel p- type) with channel doping (N.) = 1.45x10" 1/cm', oxide thickness (tor) = 2nm, and temperature (T)=30OK. Use the table below for values of various constants [30 points] 2. Compute the drain current of the MOSFET of question 1 for following conditions. Assume: Width (W) = 110nm, and Length (L) = 22nm, un = 1000 cm/V-s [40 points] a. Vgs = 2.0V, Vds=100mV b. Vgs = 2.5V, Vds = 2.5V 3. Consider the MOSFETS from equation 1 shows a subthreshold current of 10nA with Vgs=0. Compute Vgs at which current will be 500nA? Assume, exp (-V = 0, and T = 300K [30 KT Points] Useful Equations and constants: ZEsiNa(2Wm) kT Na Ven = 24g + and p= In- Cox MOSFET Currents: Linear (V,s > Veh and Vas < Vgs - Vin): las = 4,Cox (Vgs-V)Vas -Vås Saturation (Vas > Veh. Vas 2 Vgs - Ve): las =Cox(Vas - Ve)* Subthreshold Current in MOSFET (Vgs < Vth): Ilas = 1, exp ( (1- exp (-) !! !! (q(Vas-V %3D nkT n = 1+ Ci = 1+t x fax , and depletion width = tsi 2Esi(2B) Cox Eox tsi qNa Constant Symbol Value Boltzmann's constant k 1.38x10-23 1/K Charge of an electron 1.6x10-1"C Thermal voltage @ 30OK KT/9 0.026 V Permittivity of free space 8.854x10-14 F/cm Permittivity of silicon Esi 11.68, - 1.03x10-12 F/cm Permittivity of SiO, Ear 3.9€g = 3.45x10-13 F/cm Concentration of carriers in intrinsic silicon 1.45x1010 1/cm3