Consider a silicon pn junction diode with Aluminium as the contact metal. Al N P OV...

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Consider a silicon pn junction diode with Aluminium as the contact metal. Al N P OV The p side is doped to 1.5 × 10¹6 atoms/cm³, while the n side is doped to 10¹7 atoms/cm³. The electrostatic potential in the bulk of the p side is OV. The contact metal is Aluminium, whose Fermi level lies 50meV below the conduction band of silicon. The band gap of silicon may be taken as 1.12 eV. Al The Fermi level in the P semiconductor is KT/q ln(Na/ni) below the midgap, while that for the N semiconductor is KT/q ln(Nd/ni) above the midgap. Take KT/q = .026V, n = 1.5 × 10¹0/cm³. Find the electrostatic potential i) at the Aluminium contact on the p side ii) in the bulk of n side (outside the depletion region), and iii) at the Aluminium contact on the n side. Consider a silicon pn junction diode with Aluminium as the contact metal. Al N P OV The p side is doped to 1.5 × 10¹6 atoms/cm³, while the n side is doped to 10¹7 atoms/cm³. The electrostatic potential in the bulk of the p side is OV. The contact metal is Aluminium, whose Fermi level lies 50meV below the conduction band of silicon. The band gap of silicon may be taken as 1.12 eV. Al The Fermi level in the P semiconductor is KT/q ln(Na/ni) below the midgap, while that for the N semiconductor is KT/q ln(Nd/ni) above the midgap. Take KT/q = .026V, n = 1.5 × 10¹0/cm³. Find the electrostatic potential i) at the Aluminium contact on the p side ii) in the bulk of n side (outside the depletion region), and iii) at the Aluminium contact on the n side.

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