Draw the cross section of n-MOSFET with threshold voltage of 0.5V under the following conditions (Make...

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Draw the cross section of n-MOSFET with threshold voltage of 0.5V under the following conditions (Make sure you identify the n-MOSFET operating regions for each cases given below) a. Vos=-0.5V, VDS = 5V b. VGS = 1V, VDS = 2mV c. VGs 0.7V, VDs = 0.3V d. VGS IV, VDs = 0.1V Q2. An NMOS transistor, fabricated with W = 100 µm and L=5 µm in a technology for which kn = 50 μA/V² and Vt = 1 V, is to be operated at very small values of Vps as a linear resistor. For VGs varying from 1.1 V to 11 V, what range of resistor values can be obtained? Q3. Consider an n-channel MOSFET with tox=20 nm, n = 650 cm²/V- s, Vin = 0.8 V, and W/L 10. Find the drain current in the following cases: a. VGs=5 V and VDs = 1 V b. c. VGs = 5 V and Vps = 0.2 V VGS = VDS = 5V Q4. A MOSFET carries a drain current of 1 mA with Vps = 0.5 V in saturation with channel length modulation and λ = 0.1 V-¹. a. Determine the change in Ip if Vps rises to I V. b. What is the device output impedance? Q5. Based on the manufacturing design and manufacturing methods we studied in EECE300 (P-N junction Diodes and MOSFETs), research and document the role of economics, safety, and manufacturability of microelectronics devices and circuits. Draw the cross section of n-MOSFET with threshold voltage of 0.5V under the following conditions (Make sure you identify the n-MOSFET operating regions for each cases given below) a. Vos=-0.5V, VDS = 5V b. VGS = 1V, VDS = 2mV c. VGs 0.7V, VDs = 0.3V d. VGS IV, VDs = 0.1V Q2. An NMOS transistor, fabricated with W = 100 µm and L=5 µm in a technology for which kn = 50 μA/V² and Vt = 1 V, is to be operated at very small values of Vps as a linear resistor. For VGs varying from 1.1 V to 11 V, what range of resistor values can be obtained? Q3. Consider an n-channel MOSFET with tox=20 nm, n = 650 cm²/V- s, Vin = 0.8 V, and W/L 10. Find the drain current in the following cases: a. VGs=5 V and VDs = 1 V b. c. VGs = 5 V and Vps = 0.2 V VGS = VDS = 5V Q4. A MOSFET carries a drain current of 1 mA with Vps = 0.5 V in saturation with channel length modulation and λ = 0.1 V-¹. a. Determine the change in Ip if Vps rises to I V. b. What is the device output impedance? Q5. Based on the manufacturing design and manufacturing methods we studied in EECE300 (P-N junction Diodes and MOSFETs), research and document the role of economics, safety, and manufacturability of microelectronics devices and circuits.

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Here are the answers to the questions a VGS05V VDS 5V Region Cutoff region No conduction b VGS 1V VDS 2mV Region LinearTriode region Device operating ... View the full answer