In an intrinsic semiconductor, the free carrier concentration n (in cm3) varies with temperature T (in...

Transcribed Image Text:

In an intrinsic semiconductor, the free carrier concentration n (in cm3) varies with temperature T (in Kelvin) as shown in the figure below. The band gap of the semiconductor is (use Boltzmann constant k = 8.625×10 eVK-¹) В (a) 1.44 eV (b) 0.72 eV (c) 1.38 eV (d) 0.69 eV 36.5- 35.5- In(n) 34.5- 33.5- 32.5- - T Fa 2 3 1000/T In an intrinsic semiconductor, the free carrier concentration n (in cm3) varies with temperature T (in Kelvin) as shown in the figure below. The band gap of the semiconductor is (use Boltzmann constant k = 8.625×10 eVK-¹) В (a) 1.44 eV (b) 0.72 eV (c) 1.38 eV (d) 0.69 eV 36.5- 35.5- In(n) 34.5- 33.5- 32.5- - T Fa 2 3 1000/T

Answer rating: 100% (QA)

The detailed ... View the full answer