Instead of using calculated values of logical effort (g) and parasitic (p), more accurate delay estimation...

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Instead of using calculated values of logical effort (g) and parasitic (p), more accurate delay estimation is possible by using a gate characterization setup to capture measured g and p values. Use the gate characterization setup given below to measure the logical effort (g) and the parasitic (p) of INV and NAND2 gates. Use Vad = 1.2V, p/n ratio is 2.0, W min = 25nm, Lmin=25nm. Repeat the measurement starting rom h=2 to h=10. Plot the delay versus h and then use a curve fitting tool (Microsoft Excel or Matlab) to calculate T, ginys Piny, gnand2, Prand2. Use 22nm predictive technology model in the measurements. You can use any Spice based circuit simulator such as LTSPICE. Provide schematic of gates including sizes, gate characterization setup and an example of input/output waveform captured from the simulator. For multiple input gates, only one input characterization is sufficient, other inputs can be fixed to a constant input. Hint: Process technology file, a LTSPICE demo and Excel based technology characterization file are added to Collab System. You can increase the size of a gate by h times to create h copy of that gate. Use 0.1pF capacitors at the output of (h-1)*h and h*h copy of gates as a load. Connect bulk port of NMOS to GND and bulk port of PMOS to Vdd. In your simulation, use a pulse input with the following specifications and measure rise and fall delays for the gate under test. Vinitial [V 0 1.2 Tdelay[s]: 0 Trise[s]: 0.00001u Tfall(s): 0.00001u Ton[s]: 0.5u Tperiod[s]: lu Ncycles: 100 Von [V: Pulse Input h-1 (h-1) h h-1 h-1) h Gate Under Test h hth Instead of using calculated values of logical effort (g) and parasitic (p), more accurate delay estimation is possible by using a gate characterization setup to capture measured g and p values. Use the gate characterization setup given below to measure the logical effort (g) and the parasitic (p) of INV and NAND2 gates. Use Vad = 1.2V, p/n ratio is 2.0, W min = 25nm, Lmin=25nm. Repeat the measurement starting rom h=2 to h=10. Plot the delay versus h and then use a curve fitting tool (Microsoft Excel or Matlab) to calculate T, ginys Piny, gnand2, Prand2. Use 22nm predictive technology model in the measurements. You can use any Spice based circuit simulator such as LTSPICE. Provide schematic of gates including sizes, gate characterization setup and an example of input/output waveform captured from the simulator. For multiple input gates, only one input characterization is sufficient, other inputs can be fixed to a constant input. Hint: Process technology file, a LTSPICE demo and Excel based technology characterization file are added to Collab System. You can increase the size of a gate by h times to create h copy of that gate. Use 0.1pF capacitors at the output of (h-1)*h and h*h copy of gates as a load. Connect bulk port of NMOS to GND and bulk port of PMOS to Vdd. In your simulation, use a pulse input with the following specifications and measure rise and fall delays for the gate under test. Vinitial [V 0 1.2 Tdelay[s]: 0 Trise[s]: 0.00001u Tfall(s): 0.00001u Ton[s]: 0.5u Tperiod[s]: lu Ncycles: 100 Von [V: Pulse Input h-1 (h-1) h h-1 h-1) h Gate Under Test h hth

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I can guide you through the process of creating a gate characterization setup to measure the logical effort g and parasitic p of INV and NAND2 gates a... View the full answer