What is the electrical resistance of a 0.1*2*5mm^3 slab of N-type doped silicon with Nd = 10^14cm-3 when measuring it along its 5mm length. (resistance between the two 0.1mm*2mm faces).  

b) If a UV light source with wavelength of 365nm and uniform intensity of 20mW/cm^2 shines on the 5mm*2mm face of the silicon slab, what percentage of its energy will be absorbed by the silicon slab? (assume an absorption coefficient of  = 20 cm-1) 

c) What is the concentration of extra optically generated carriers in steady state resulting from the UV exposure? What is the resulting resistivity of the silicon slab? (assume a carrier life time of 2 microseconds for both p-type and n-type carriers) (assume that the generated carriers are distributed uniformly along the thickness of the slab) 

d) If the light source is turned off how long will it take for half of the optically generated carriers to recombine? 

 e) Repeat parts b and c for a light intensity of 20W/cm^2 . 

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