When a negative bias of 0.1 V is applied to the metal side of an ideal...

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When a negative bias of 0.1 V is applied to the metal side of an ideal Schottky diode at T = 320 K, a current density J = -5.32 10-7A/cm² is measured. For large positive bias, the current is very low and practically independent of V. The conductivity effective masses of charge carriers are me/me = 0.8 and m/me = 1.2. The semiconductor bandgap is Eg = 1.2 eV and electron affinity ex = 3.8 eV. (a) Draw the energy band diagram of the metal-semiconductor contact at zero bias. (b) What are the reverse saturation current density and the height of Schottky barrier in this junction? What is the metal work function value? . When a negative bias of 0.1 V is applied to the metal side of an ideal Schottky diode at T = 320 K, a current density J = -5.32 10-7A/cm² is measured. For large positive bias, the current is very low and practically independent of V. The conductivity effective masses of charge carriers are me/me = 0.8 and m/me = 1.2. The semiconductor bandgap is Eg = 1.2 eV and electron affinity ex = 3.8 eV. (a) Draw the energy band diagram of the metal-semiconductor contact at zero bias. (b) What are the reverse saturation current density and the height of Schottky barrier in this junction? What is the metal work function value? .

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This question asks us to consider the properties of an ideal Schottky diode and use that information to a Draw the energy band diagram of the metalsemiconductor contact at zero bias b Calculate the re... View the full answer