You are given a GaAs semiconductor sample and asked to design a PIN photo-detector for maximum...

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You are given a GaAs semiconductor sample and asked to design a PIN photo-detector for maximum quantum efficiency. You are given the following for your design: 1. 27.5 % of the incident photons to be detected are reflected back from the detector surface. 2. The absorption coefficient of GaAs at the incident photon energy is aGasu =1x 10 cm. 3. Neglect the diffusion current and the thicknesses of the nt and p+ regions. What is the maximum detector efficiency you will obtain from your design? O a. 45.83 % O b.50.75 % O 23.29 % Od.9.579 % O e. 58.00 % : Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 J.s Si Ge GaAs 9.11 x 10-31 Kg E, (eV) n, (cm-3) Hn (cm2/V-s) "p (cm²/V-s) Ne (em ) N. (em-3) m:/m m, /m. & (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19C 8.85 x 10-12 F/m 1.05 x 10 J-s 1500 3900 8500 to 450 1900 400 2.78 x 10 1.04 x 1019 4.45 x 1017 8.6 x 10-5 eV/K 26 mV (T 300 K) 26 meV (T 300 K) 3 x 10 m/s K 9.84 x 1018 6 x 1018 7.72 x 1018 KT/4 0.082 0.98 0.067 KT 0.28 0.49 0.45 11.7 16 13.1 nair=1 nGaAs = 3.66 Some useful relations E9AL,Ga-As(r) 1.424 + 1.247x Egin,Ga-As(*) 0.36+ 1.064r 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10- Wb/em2 You are given a GaAs semiconductor sample and asked to design a PIN photo-detector for maximum quantum efficiency. You are given the following for your design: 1. 27.5 % of the incident photons to be detected are reflected back from the detector surface. 2. The absorption coefficient of GaAs at the incident photon energy is aGasu =1x 10 cm. 3. Neglect the diffusion current and the thicknesses of the nt and p+ regions. What is the maximum detector efficiency you will obtain from your design? O a. 45.83 % O b.50.75 % O 23.29 % Od.9.579 % O e. 58.00 % : Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 x 10-34 J.s Si Ge GaAs 9.11 x 10-31 Kg E, (eV) n, (cm-3) Hn (cm2/V-s) "p (cm²/V-s) Ne (em ) N. (em-3) m:/m m, /m. & (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19C 8.85 x 10-12 F/m 1.05 x 10 J-s 1500 3900 8500 to 450 1900 400 2.78 x 10 1.04 x 1019 4.45 x 1017 8.6 x 10-5 eV/K 26 mV (T 300 K) 26 meV (T 300 K) 3 x 10 m/s K 9.84 x 1018 6 x 1018 7.72 x 1018 KT/4 0.082 0.98 0.067 KT 0.28 0.49 0.45 11.7 16 13.1 nair=1 nGaAs = 3.66 Some useful relations E9AL,Ga-As(r) 1.424 + 1.247x Egin,Ga-As(*) 0.36+ 1.064r 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10- Wb/em2