(a) Calculate the band bending depth d for a p–n junction in the semiconductor GaAs, with doping concentration n = 10¹⁶ cm⁻³ and dielectric constant ϵ = 14ϵ₀, using (2.6.6).

(b) Suppose that instead of having equal doping concentrations, the p-type side is doped at concentation n = 5 × 10¹⁶ cm⁻³ and the n-type is doped at n = 10¹⁶ cm⁻³. How does this change the junction?

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d= Δε en (2.6.6)