Consider a four-input NMOS NAND logic gate with a depletion load similar to the circuit in Figure

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Consider a four-input NMOS NAND logic gate with a depletion load similar to the circuit in Figure P16.23. The bias voltage is \(V_{D D}=3.3 \mathrm{~V}\), and the threshold voltages are \(V_{T N D}=0.4 \mathrm{~V}\) and \(V_{T N L}=-0.6 \mathrm{~V}\). The logic 0 output voltage is to be \(0.10 \mathrm{~V}\).

(a) Using approximation methods, determine \(K_{D} / K_{L}\).

(b) The maximum power dissipation in the circuit is to be \(100 \mu \mathrm{W}\). Determine \((W / L)_{L}\) and \((W / L)_{D}\).

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