Consider a silicon pn junction. The (mathrm{n})-region is doped to a value of (N_{d}=10^{16} mathrm{~cm}^{-3}). The built-in
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Consider a silicon pn junction. The \(\mathrm{n}\)-region is doped to a value of \(N_{d}=10^{16} \mathrm{~cm}^{-3}\). The built-in potential barrier is to be \(V_{b i}=0.712 \mathrm{~V}\). Determine the required p-type doping concentration.
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Related Book For
Microelectronics Circuit Analysis And Design
ISBN: 9780071289474
4th Edition
Authors: Donald A. Neamen
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