Consider the source-follower circuit in Figure P4.64. The transistor parameters are (V_{T P}=-0.4 mathrm{~V}, k_{p}^{prime}=40 mu mathrm{A}
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Consider the source-follower circuit in Figure P4.64. The transistor parameters are \(V_{T P}=-0.4 \mathrm{~V}, k_{p}^{\prime}=40 \mu \mathrm{A} / \mathrm{V}^{2},(W / L)_{L}=5,(W / L)_{D}=50\), and \(\lambda_{D}=\lambda_{L}=0.025 \mathrm{~V}^{-1}\). Assume \(V_{B}=1 \mathrm{~V}\).
(a) What is the maximum value of \(V_{o}\) such that \(M_{L}\) remains biased in the saturation region?
(b) For \(M_{L}\) biased in the saturation region, determine \(I_{D}\).
(c) Using the results of parts (a) and (b), find \(V_{S G D}\).
(d) Determine the small-signal voltage gain when the dc value of \(V_{I}=0.2 \mathrm{~V}\).
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Related Book For
Microelectronics Circuit Analysis And Design
ISBN: 9780071289474
4th Edition
Authors: Donald A. Neamen
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