In the source-follower circuit in Figure P4.39 with a depletion NMOS transistor, the device parameters are: (V_{T
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In the source-follower circuit in Figure P4.39 with a depletion NMOS transistor, the device parameters are: \(V_{T N}=-2 \mathrm{~V}, K_{n}=5 \mathrm{~mA} / \mathrm{V}^{2}\), and \(\lambda=0.01 \mathrm{~V}^{-1}\). Design the circuit such that \(I_{D Q}=5 \mathrm{~mA}\). Find the smallsignal voltage gain \(A_{v}=v_{o} / v_{i}\) and the output resistance \(R_{o}\).
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Related Book For
Microelectronics Circuit Analysis And Design
ISBN: 9780071289474
4th Edition
Authors: Donald A. Neamen
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