The GaAs MESFET in the circuit in Figure P3.71 has parameters \(k=\) \(250 \mu \mathrm{A} / \mathrm{V}^{2}\) and \(V_{T N}=0.20 \mathrm{~V}\). Let \(R_{1}+R_{2}=150 \mathrm{k} \Omega\). Design the circuit such that \(I_{D}=40 \mu \mathrm{A}\) and \(V_{D S}=2 \mathrm{~V}\).

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VDD=3 V RD R Rs 10 k Figure P3.71