The parameters of an n-channel enhancement-mode MOSFET are (V_{T N}=0.5 mathrm{~V}, k_{n}^{prime}=120 mu mathrm{A} / mathrm{V}^{2}), and

Question:

The parameters of an n-channel enhancement-mode MOSFET are $V_{T N}=0.5 \mathrm{~V}, k_{n}^{\prime}=120 \mu \mathrm{A} / \mathrm{V}^{2}$, and $W / L=4$. What is the maximum value of $\lambda$ and the minimum value of $V_{A}$ such that for $V_{G S}=2 \mathrm{~V}, r_{o} \geq 200 \mathrm{k} \Omega$ ?

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