The parameters of the BiCMOS circuit in Figure P12.40 are \(V^{+}=5 \mathrm{~V}\), \(V_{G G}=2.5 \mathrm{~V}, R_{D 1}=5 \mathrm{k} \Omega, R_{E 2}=1.6 \mathrm{k} \Omega\), and \(R_{L}=1.2 \mathrm{k} \Omega\). The transistor parameters are \(K_{n}=1.5 \mathrm{~mA} / \mathrm{V}^{2}, V_{T N}=0.5 \mathrm{~V}, \lambda=0\) for \(M_{1}\) and \(h_{F E}=120, V_{E B}(\) on \()=0.7 \mathrm{~V}, V_{A}=\infty\) for \(Q_{2}\).

(a) Determine the quiescent values \(I_{D Q 1}\) and \(I_{C Q 2}\).

(b) Find the small-signal voltage gain \(A_{v}=v_{o} / v_{i}\).

(c) Determine the small-signal output resistance \(R_{o f}\).

Transcribed Image Text:

V+ Rp1 www RE2 + Vi VGG M Q2 ww Rof RL Figure P12.40