A base-emitter voltage of from 520 mV to 580 mV is measured on a test npn transistor
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A base-emitter voltage of from 520 mV to 580 mV is measured on a test npn transistor structure with 10 μA collector current. The emitter dimensions on the test transistor are 100 μm × 100 μm. Determine the range of values of QB implied by this data. Use this information to calculate the range of values of sheet resistance that will be observed in the pinch resistors in the circuit. Assume a constant electron diffusivity, D̅n, of 13 cm2/s, and a constant hole mobility of 150 cm2/V-s. Assume that the width of the depletion layer is negligible.
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Related Book For 
Analysis and Design of Analog Integrated Circuits
ISBN: 978-0470245996
5th edition
Authors: Paul R. Gray, Paul J. Hurst Stephen H. Lewis, Robert G. Meyer
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