Examine the effect of velocity saturation on MOSFET characteristics by plotting I D V DS curves for
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Examine the effect of velocity saturation on MOSFET characteristics by plotting ID−VDS curves for VGS = 1 V, 2 V, and 3 V, and VDS = 0 to 3 V in the following cases, and by comparing the results with and without inclusion of velocity saturation effects. Assume VSB = 0, Vt0 = 0.6 V, k’ =194 µA/V2, λ = 0, and ℰc =1.5 × 106 V/m.
(a) W=100 µm and L=10 µm.
(b) W=10 µm and L=1 µm.
(c) W=5 µm and L=0.5 µm.
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Related Book For
Analysis and Design of Analog Integrated Circuits
ISBN: 978-0470245996
5th edition
Authors: Paul R. Gray, Paul J. Hurst Stephen H. Lewis, Robert G. Meyer
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