For the BiCMOS circuit of Fig. 3.78, use the zero-value time-constant method to estimate the first and second most dominant poles of the circuit. Assume an input voltage drive. Use bipolar transistor data from Fig. 2.32 and MOSFET parameters C_gd= 90 fF, C_sb= C_db= 200 fF, and C_gs= 200 fF at the bias point. Further assume μ_nC_ox= 40 µA/V², V_t= 0.8 V, λ = 0, and γ = 0. Use SPICE to check your result.

Fig. 3.78:

Fig. 2.32:

Transcribed Image Text:

5 V 10 k2 R12 10 k2 Q3 1 ko R11 Q2 M1 300 Vi 1 k2 M2 R13 20 30 k2 Vertical npn Transistor with 2 µ.m² Emitter Area Lateral pnp Transistor with 2 µm? Parameter Emitter Area BF BR VA Is Ico BVCEO BVCBO BVEBO 120 50 2 3 35 V 6 x 10-18A 1 pA 30 V 6 x 10-18A 1 pA 14 V 18 V 18 V 6 V 18 V 10 ps 650 ps 5 ns TF 5 ns 400 2 200 2 100 2 20 2 40 2 10 2 5 fF C je0 Wor 14 fF 0.8 V 0.7 V 0.4 5 fF ne 0.5 Cµ0 15 fF 0.6 V 0.6 V ne 0.33 0.33 Ceso (Cbso) Vos 20 fF 40 fF 0.6 V 0.6 V 0.33 0.4