If the lateral pnp structure of Fig. 2.33a is fabricated with an epi layer resistivity of 0.5

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If the lateral pnp structure of Fig. 2.33a is fabricated with an epi layer resistivity of 0.5 Ω-cm, determine the value of collector current at which the current gain begins to fall off. Assume a diffusivity for holes of: D̅p= 10 cm2/s. Assume a base width of 8 μm.

Distance, um ! C 120 110- 100 70 6아- 30F Base Collector Emitter n' p-type substrate (a)

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Analysis and Design of Analog Integrated Circuits

ISBN: 978-0470245996

5th edition

Authors: Paul R. Gray, ‎ Paul J. Hurst Stephen H. Lewis, ‎ Robert G. Meyer

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