Calculate the concentration of acceptor impurities in silicon, and determine the type of semiconductor, if at T

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Calculate the concentration of acceptor impurities in silicon, and determine the type of semiconductor, if at T = 300 K the concentration of electrons is 5 × 1011 cm-3 and the concentration of donor impurities is 1015 cm-3. Assume ni = 1.38 × 1010 cm-3 at 300 K.

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