Consider an experiment where excess electrons are generated in a “burst” at t = 0 and x = x₀ in a semiconductor, resulting in the concentration profile n(x) shown in the figure below.

Draw the shape of the concentration profile n(x) as a result of the one-dimensional diffusion in the x-direction. No other external forces are present. Draw several shapes corresponding to several times after the initial “burst.” 

Transcribed Image Text:

n(x)