Estimate relative errors in the calculation of free carrier concentration when the Maxwell-Boltzmann statistics is applied for

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Estimate relative errors in the calculation of free carrier concentration when the Maxwell-Boltzmann statistics is applied for semiconductors with Fermi energy within the energy gap, if the Fermi level is 3kbT, 2kbT, and kbT away from the bandgap edge or if it coincides with the edge. Use the given table of the exact value of the Fermi integral (F1/2) for the comparison.

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