Plot the diode equation for an ideal Si p-n junction diode with an area 50 m 2

Plot the diode equation for an ideal Si p-n junction diode with an area 50 μm², an acceptor concentration N_A = 10¹⁸ cm^-3, a donor concentration N_D = 10¹⁸ cm-3, recombination lifetimes equal to τ_n = τ_p = 1 μ_s, and diffusion coefficients equal to D_n = 35 cm².s^-1 and D_p = 12.5 cm².s^-1.