Use the Boltzmann distribution to answer parts (a) and (b):

a. Calculate the ratio of the number of electrons at the bottom of the conduction band to those at the top of the valence band for pure Si at 300. K. The Si band gap is 1.1 eV.

b. Calculate the ratio of the number of electrons at the bottom of the conduction band to those at the top of the dopant band for P-doped Si at 300. K. The top of the dopant band lies 0.040 eV below the bottom of the Si conduction band. Assume for these calculations that the ratio of the degeneracies is unity. What can you conclude about the room temperature conductivity of these two materials on the basis of your calculations?