Notes: SHOW ALL WORK for full credit Unless otherwise specified, assume a room temperature of
Question:
Notes:
• SHOW ALL WORK for full credit
• Unless otherwise specified, assume a room temperature of 300K.
• For numerical answers, use three digits of precision/three significant digits/three
significant figures, e.g. W.XY × 10z. Always specify units.
• Specify any Baliga equations used by their equation numbers.
• If you use software to perform a calculation, include a screen shot or pdf. Clearly
explain the solution method in words.
Problem #1: Using the equations provided in Baliga, design two parallel plane diodes that can
withstand a reverse bias of 1.7kV. The first diode should have a drift region of n-type silicon, and
the second diode should have a drift region of n-type 4H-SiC. For each diode, specify: the donor
doping in the drift region, the ideal thickness of the drift region, the critical electric field at
breakdown, and the on-resistance. For each diode, calculate the temperature at which the intrinsic
charge carrier concentration is equal to the drift-region doping concentration. Explain the
significance of your results.