For intrinsic semiconductors, the intrinsic carrier concentration ni depends on temperature as follows: or taking natural logarithms,
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For intrinsic semiconductors, the intrinsic carrier concentration ni depends on temperature as follows:
or taking natural logarithms,
Thus, a plot of ln ni versus 1/T (K)???1 should be linear and yield a slope of ???Eg/2k. Using this information and the data presented in Figure, determine the band gap energies for silicon and germanium, and compare these values with those given in Table18.3.
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Fundamentals of Materials Science and Engineering An Integrated Approach
ISBN: 978-1118061602
4th Edition
Authors: David G. Rethwisch
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