One of the procedures in the production of integrated circuits is the formation of a thin insulating
Question:
x2 = Bt (18.37)
Here the parameter B is dependent on both temperature and the oxidizing atmosphere.
(a) For an atmosphere of O2 at a pressure of 1 atm, the temperature dependence of B (in units of μm2/h) is as follows:
where k is Boltmann's constant (8.62 Ã 10-5 eV/atom) and T is in K. Calculate the time required to grow an oxide layer (in an atmosphere of O2) that is 75 nm thick at both 750°C and 900°C.
(b) In an atmosphere of H2O (1 atm pressure), the expression for B (again in units of μm2/h) is
Now calculate the time required to grow an oxide layer that is 75 nm thick (in an atmosphere of H2O) at both 750°C and 900°C, and compare these times with those computed in part (a).
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Related Book For
Materials Science and Engineering An Introduction
ISBN: 978-0470419977
8th edition
Authors: William D. Callister Jr., David G. Rethwisch
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