Calculate the small-signal model parameters g m , r o , C gs , and C gd
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Value Value p-Channel Transistor n-Channel Parameter Symbol Transistor Units 1 x 1017 Atoms/cm Angstroms ΠA/μm? 1 × 107 NA, Np Substrate doping Gate oxide thickness 25 25 ter Gate leakage current density JG 1.2 0.4 Metal-silicon work function -0.6 -0.1 Channel mobility Minimum drawn channel length Source, drain junction depth Source, drain side diffusion Overlap capacitance per unit gate width cm?/V-s 390 0.1 100 0.1 Ldrwn um X; 0.15 0.16 um 0.005 0.005 La um 0.07 fF/µm 0.10 Cel Threshold adjust implant (box dist.) impurity type effective depth 0.1 5 x 1017 -0.28 1020 X; 0.1 um Atoms/cm? 5 x 1017 effective surface concentration Ni V, Nominal threshold voltage Polysilicon gate doping 0.27 Atoms/cm 1020 Nagoly concentration Poly gate sheet resistance Source, drain-bulk junction capacitances (zero bias) Source, drain-bulk junction capacitance grading coefficient Source, drain periphery capacitance (zero bias) 10 1.1 10 R, fF/um? 1.0 0.35 0.25 0.05 0.06 fF/um Cjaw0 0.05 Source, drain periphery capacitance grading coefficient Source, drain junction built-in potential 0.05 п 0.65 0.6 Qss 10" Surface-state density 10" Atoms/cm2 dX a Channel-length modulation parameter 0.06 0.05 um/V dVps
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Related Book For
Analysis and Design of Analog Integrated Circuits
ISBN: 978-0470245996
5th edition
Authors: Paul R. Gray, Paul J. Hurst Stephen H. Lewis, Robert G. Meyer
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