A Si p-n-p transistor has impurity concentrations of 6 10, 7105 and 9 107 cm in...

  

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A Si p-n-p transistor has impurity concentrations of 6 10", 7105 and 9 107 cm in the emitter, base and collector regions correspondingly. The corresponding carrier lifetime are 10, 10", and 10* s. The device cross-section area A-0.02 mm; the emitter base junction is forward biased to 0.7 V. Use diffusion coefficients D 3 cm/s, Dg-15 cm Dc-5 cm/s, and base with W-0.65 um. qAD,P. exp (a) calculate emitter current using I W KT (b) calculate current gain; (c) estimate the device switching time (RC) assuming that resistance R is controlled by emitter current and capacitance C is due to the B-C depletion region under applied voltage of 1 V. A Si p-n-p transistor has impurity concentrations of 6 10", 7105 and 9 107 cm in the emitter, base and collector regions correspondingly. The corresponding carrier lifetime are 10, 10", and 10* s. The device cross-section area A-0.02 mm; the emitter base junction is forward biased to 0.7 V. Use diffusion coefficients D 3 cm/s, Dg-15 cm Dc-5 cm/s, and base with W-0.65 um. qAD,P. exp (a) calculate emitter current using I W KT (b) calculate current gain; (c) estimate the device switching time (RC) assuming that resistance R is controlled by emitter current and capacitance C is due to the B-C depletion region under applied voltage of 1 V.