A MOSFET has a VT of 0.85 and the subthreshold swing is 90mV/dec. Assume the transistor is to operate at a VDD=3V. Now, an engineer wants to increase the drain saturation current by reducing the threshold voltage to 0.4V while keeping all other parameters unchanged. If the original leakage current at VG=0V is 0.15pA (assume has not reached the leakage limit yet) and the saturation drain current at VG=VDD is 9mA. 

a) Calculate the new saturation drain current in mA at = at room temperature.

b) Calculate the new drain leakage current in pA at =0 and D= at room temperature? 

c) Calculate the new drain leakage current in pA at =0 and D=0.5 at room temperature. 

d) Another MOSFET has the same structure as the MOSFET described above, except that the oxide thickness is twice as thick. Estimate the subthreshold swing

Answer rating: 100% (QA)

The detailed answer for the above question is provided below SOLUTION a To calculate the new saturation drain current we need to use the formula Ids Vgs Vth where Ids is the drain current Vgs is the g... View the full answer