A Si p-n junction having a uniform cross-sectional area of 10-4 cm is forward biased at...

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A Si p-n junction having a uniform cross-sectional area of 10-4 cm is forward biased at 0.6 V at 300 K. Its contact potential is 0.93 V and the doping in the p-side is NA = 1.5x107 cm. Assume that minority carrier lifetimes are 10 seconds in both sides. (a) Determine the total number of excess electrons in the p-side and the total number of excess holes in the n-side. (b) Determine the current density of the current flowing through the junction. (c) Determine the electric field in the p-region at the position of about 10 minority carrier diffusion lengths away from the junction. At this position, does the electric field point in the direction from p-side to n-side or from n-side to p-side? A Si p-n junction having a uniform cross-sectional area of 10-4 cm is forward biased at 0.6 V at 300 K. Its contact potential is 0.93 V and the doping in the p-side is NA = 1.5x107 cm. Assume that minority carrier lifetimes are 10 seconds in both sides. (a) Determine the total number of excess electrons in the p-side and the total number of excess holes in the n-side. (b) Determine the current density of the current flowing through the junction. (c) Determine the electric field in the p-region at the position of about 10 minority carrier diffusion lengths away from the junction. At this position, does the electric field point in the direction from p-side to n-side or from n-side to p-side?