A silicon abrupt junction in thermal equilibrium at T = 300 K is doped such that E
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Question:
A silicon abrupt junction in thermal equilibrium at T = 300 K is doped such that Ec − EF = 0.21 eV in the n region and EF − Ev = 0.18 eV in the p region.
(a) Draw the energy band diagram of the PN junction.
(b) Determine the impurity doping concentrations in each region.
(c) Determine Vbi.
Related Book For
Chemistry The Central Science
ISBN: 978-0321696724
12th edition
Authors: Theodore Brown, Eugene LeMay, Bruce Bursten, Catherine Murphy, Patrick Woodward
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