(a) The electron concentration in a piece of Si at 300 K is 105 cm. What...

 

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(a) The electron concentration in a piece of Si at 300 K is 105 cm. What is the hole concentration? (b) A semiconductor is doped with impurity concentrations Na and Na such that Na-Na >>n; and all the impurities are ionized. Determine n and p. (c) In a silicon sample at T = 300 K, the Fermi level is located at 0.26 eV (10 kT) above the intrinsic Fermi level. What are the hole and electron concentrations? Boron atoms are added to a Si film resulting in an impurity density of 4 1016 cm. (a) What is the conductivity type (N-type or P-type) of this film? (b) What are the equilibrium electron and hole densities at 300 K and 600 K? (a) The electron concentration in a piece of Si at 300 K is 105 cm. What is the hole concentration? (b) A semiconductor is doped with impurity concentrations Na and Na such that Na-Na >>n; and all the impurities are ionized. Determine n and p. (c) In a silicon sample at T = 300 K, the Fermi level is located at 0.26 eV (10 kT) above the intrinsic Fermi level. What are the hole and electron concentrations? Boron atoms are added to a Si film resulting in an impurity density of 4 1016 cm. (a) What is the conductivity type (N-type or P-type) of this film? (b) What are the equilibrium electron and hole densities at 300 K and 600 K?