Consider a CMOS process for which Lmin = 0.8 m, tox= 15 nm, ,,= 550 cm/V-s,...

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Consider a CMOS process for which Lmin = 0.8 μm, tox= 15 nm, ,,= 550 cm²/V-s, and V₁ = 0.7 V. V, (a) Find Cox and kn. (b) For an NMOS transistor with W/L = 16 um/0.8 μm, calcu- late the values of Vov, Vas, and VDSmin needed to operate the transistor in the saturation region with a de current ID = 100 μA. (c) For the device in (b), find the value of Voy and Vas required to cause the device to operate as a 1000-2 resistor for very small ups. Consider a CMOS process for which Lmin = 0.8 μm, tox= 15 nm, ,,= 550 cm²/V-s, and V₁ = 0.7 V. V, (a) Find Cox and kn. (b) For an NMOS transistor with W/L = 16 um/0.8 μm, calcu- late the values of Vov, Vas, and VDSmin needed to operate the transistor in the saturation region with a de current ID = 100 μA. (c) For the device in (b), find the value of Voy and Vas required to cause the device to operate as a 1000-2 resistor for very small ups.

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