Given Si at 300K where ni= 1.09 x 1010 cm, Eg = 1.124 eV, the effective...

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Given Si at 300K where ni= 1.09 x 1010 cm³, Eg = 1.124 eV, the effective mass ratios are m₁* = 1.09 and m2* = 1.15, and D = 11.7. a) Calculate the intrinsic Fermi level for this semiconductor. b) Calculate the ground-state energy (ie: n=1) of the donor and acceptor bands c) Now, dope the semiconductor in (a) with 3x1016 ionized donors/cm³, and 2.9x1016 ionized acceptors/cm³ and answer the following: i. Use the full expression to calculate the majority carrier concentration in the extrinsic semiconductor. ii. What is the majority carrier? iii. Calculate the minority carrier concentration in the extrinsic semiconductor. iv. What is the minority carrier? v. vi. Calculate |EF-El for the doped semiconductor. Determine the total Fermi energy for the doped semiconductor. d) Si is an indirect-gap semiconductor. Draw an energy band diagram for the doped Si including the CB, all VB's, EG, Ed, Ei, &f, and Ea. Given Si at 300K where ni= 1.09 x 1010 cm³, Eg = 1.124 eV, the effective mass ratios are m₁* = 1.09 and m2* = 1.15, and D = 11.7. a) Calculate the intrinsic Fermi level for this semiconductor. b) Calculate the ground-state energy (ie: n=1) of the donor and acceptor bands c) Now, dope the semiconductor in (a) with 3x1016 ionized donors/cm³, and 2.9x1016 ionized acceptors/cm³ and answer the following: i. Use the full expression to calculate the majority carrier concentration in the extrinsic semiconductor. ii. What is the majority carrier? iii. Calculate the minority carrier concentration in the extrinsic semiconductor. iv. What is the minority carrier? v. vi. Calculate |EF-El for the doped semiconductor. Determine the total Fermi energy for the doped semiconductor. d) Si is an indirect-gap semiconductor. Draw an energy band diagram for the doped Si including the CB, all VB's, EG, Ed, Ei, &f, and Ea.