Q3. a) A CMOS inverter is built in a process where k' = 100A/V, k'p =...

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Q3. a) A CMOS inverter is built in a process where k' = 100μA/V², k'p = 42μA/V², Vin = 0.7V, Vip = - 0.8V,and VDD = 3.3V. Find the switching thershold voltage Varif (W/L)n = 10 and (W/L)p=14. [4] b) Find the values of ß, and 3, needed to obtain an inverter thershold voltage VM of 1.3V with Vpp = 3V. Assume that Vm = 0.6V, V = -0.82V. What would be the relative device sizes if k' = 100μA/V² and the mobility values are related by un = 2.2 μp? [6] Q3. a) A CMOS inverter is built in a process where k' = 100μA/V², k'p = 42μA/V², Vin = 0.7V, Vip = - 0.8V,and VDD = 3.3V. Find the switching thershold voltage Varif (W/L)n = 10 and (W/L)p=14. [4] b) Find the values of ß, and 3, needed to obtain an inverter thershold voltage VM of 1.3V with Vpp = 3V. Assume that Vm = 0.6V, V = -0.82V. What would be the relative device sizes if k' = 100μA/V² and the mobility values are related by un = 2.2 μp? [6]

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Answer 3 a Vm Kn 1004AV 2 xp 424 AN v2 VM 207V Vtp2 Bp m 2 NDD 23... View the full answer