We have a MOSCAP at 300K with metal work function M =4.5eV, Silicon (esi-11.7, electron affinity...

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We have a MOSCAP at 300K with metal work function M =4.5eV, Silicon (esi-11.7, electron affinity X-4.05eV, Eg-1.12eV, n-10¹0 cm-³) is doped with 1016 cm-3 Boron and the oxide (SiO2 &ox 3.9) thickness of 5nm. Use Vfb= (M-osi)/q, psix+kT*In(N₁/ni)+Eg/2, at 300K. a. Find the flat band voltage. b. Find the threshold voltage. c. Find capacitance per area in accumulation. d. Find capacitance per area in inversion. e. Draw its CV and QG-V plot. We have a MOSCAP at 300K with metal work function M =4.5eV, Silicon (esi-11.7, electron affinity X-4.05eV, Eg-1.12eV, n-10¹0 cm-³) is doped with 1016 cm-3 Boron and the oxide (SiO2 &ox 3.9) thickness of 5nm. Use Vfb= (M-osi)/q, psix+kT*In(N₁/ni)+Eg/2, at 300K. a. Find the flat band voltage. b. Find the threshold voltage. c. Find capacitance per area in accumulation. d. Find capacitance per area in inversion. e. Draw its CV and QG-V plot.

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