For a p-channel enhancement-mode MOSFET, the parameters are (K_{P}=) (2 mathrm{~mA} / mathrm{V}^{2}) and (V_{T P}=-0.5 mathrm{~V}).
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For a p-channel enhancement-mode MOSFET, the parameters are \(K_{P}=\) \(2 \mathrm{~mA} / \mathrm{V}^{2}\) and \(V_{T P}=-0.5 \mathrm{~V}\). The gate is at ground potential, and the source and substrate terminals are at \(+5 \mathrm{~V}\). Determine \(I_{D}\) when the drain terminal voltage is:
(a) \(V_{D}=0 \mathrm{~V}\),
(b) \(V_{D}=2 \mathrm{~V}\),
(c) \(V_{D}=4 \mathrm{~V}\), and
(d) \(V_{D}=5 \mathrm{~V}\).
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Related Book For
Microelectronics Circuit Analysis And Design
ISBN: 9780071289474
4th Edition
Authors: Donald A. Neamen
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